features description applications ? sot-23 package ? surface mount ? wide emission angle symbol parameter min max units p d power dissipation 170 mw i f continuous forward current 100 ma i p peak forward current 1 a v r reverse voltage 5 v t stg storage temperature -25 +100 c t o operating temperature -25 +100 c t s soldering temperature* +240 c symbol characteristic test conditions min typ max units p o output power i f = 50 ma 18 22 mw v f forward voltage i f = 20 ma 1.5 1.9 v v r reverse breakdown voltage i f = 10 a 5 30 v l p peak wavelength i f = 100 ma 920 940 960 nm l spectral halfwidth i f = 100 ma 50 nm c t terminal capacitance v r = 0v, f = 1mhz 25 pf t r rise time i f = 100 ma 80 ns t f fall time i f = 100 ma 180 ns gaalas high power ir led emitters pdi-e940 the pdi-e940 is a high power 940 nm and high power gaas emitter, packaged in a small low cost sot-23 surface mount package ? fiber optic sources ? optical encoders ? point light sources * 1/16 inch from case for 3 seconds max. electro - optical characteristics rating (ta) = 2 3 c unless otherwise noted information in this technical datasheet is believed to be correct and reliable. however, no responsibility is assumed for possi ble inaccuracies or omission. specifications are subject to change without notice. advanced photonix inc. 1240 avenida acaso, camar illo ca 93012 ? phone (805) 987-0146 ? fax (805) 484-9935 ? www.advancedphotonix.com rev 3/30/06 absolute maximum rating (ta) = 2 3 c unless otherwise noted package dimensions inch [mm] chip dimensions inch [mm] sot-23 package .016 [0.41] sq ?0.0045 [0.114] cathode bond pad bottom side anode .118 [3.00] .075 [1.90] .037 [0.95] .020 [0.51] .110 [2.79] 1 2 3 clear plastic .059 [1.50] 15 .039 [1.00] .043 [1.10] .008 [0.20] .009 [0.22] .004 [0.10] emission angle 140 1 2 3
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